PART |
Description |
Maker |
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor Samsung Electronic
|
HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式)) RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V |
4,194,304 x 4 - Bit CMOS FPM Dynamic RAM 4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MB81V16165A-60L |
CMOS 1M ×16 Bit Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页存取模式动态RAM)
|
Fujitsu Limited
|
MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM 1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM 4Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc] http://
|
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 2097152 WORDS x 32 BIT DYNAMIC RAM MODULE 2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE 2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|